Optically pumped broadband terahertz modulator based on nanostructured PtSe2 thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00531701" target="_blank" >RIV/68378271:_____/20:00531701 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/adom.201901714" target="_blank" >https://doi.org/10.1002/adom.201901714</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adom.201901714" target="_blank" >10.1002/adom.201901714</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optically pumped broadband terahertz modulator based on nanostructured PtSe2 thin films

Popis výsledku v původním jazyce

Here, an optically pumped terahertz (THz) modulator based on the novel transition metal dichalcogenide (TMD) material platinum diselenide (PtSe2) is demonstrated. The nanostructured PtSe2 thin films are formed by direct selenization of the sputtered platinum film on a high-resistivity silicon substrate. Raman spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy confirm the formation of polycrystalline PtSe2 nanostructures. The transmission measurements reveal the modulation of the THz waves in the wide frequency range of 0.1-1 THz. The modulation depth of 32.7% is achieved under low pumping laser power of 1 W cm(-2). The numerical analysis based on the finite difference time domain method is in good agreement with the experimentally obtained results. Further, the simulation results manifest that higher modulation depth can be achieved with the utilization of higher laser power. This work provides a path for the application of TMD materials like PtSe2 in the development of THz tunable devices such as modulators, polarizers, filters.

Název v anglickém jazyce

Optically pumped broadband terahertz modulator based on nanostructured PtSe2 thin films

Popis výsledku anglicky

Here, an optically pumped terahertz (THz) modulator based on the novel transition metal dichalcogenide (TMD) material platinum diselenide (PtSe2) is demonstrated. The nanostructured PtSe2 thin films are formed by direct selenization of the sputtered platinum film on a high-resistivity silicon substrate. Raman spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy confirm the formation of polycrystalline PtSe2 nanostructures. The transmission measurements reveal the modulation of the THz waves in the wide frequency range of 0.1-1 THz. The modulation depth of 32.7% is achieved under low pumping laser power of 1 W cm(-2). The numerical analysis based on the finite difference time domain method is in good agreement with the experimentally obtained results. Further, the simulation results manifest that higher modulation depth can be achieved with the utilization of higher laser power. This work provides a path for the application of TMD materials like PtSe2 in the development of THz tunable devices such as modulators, polarizers, filters.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Optical Materials

ISSN

2195-1071

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000508447500001

EID výsledku v databázi Scopus

2-s2.0-85078659798