Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533932" target="_blank" >RIV/68378271:_____/20:00533932 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2020.147346" target="_blank" >https://doi.org/10.1016/j.apsusc.2020.147346</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2020.147346" target="_blank" >10.1016/j.apsusc.2020.147346</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

Popis výsledku v původním jazyce

Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtual substrates, we investigate the atomic structure of the MOVPE (metalorganic vapor phase epitaxy)-prepared GaP(1 1 1)B surface (phosphorus face). We find that upon high-temperature annealing in the H2-based MOVPE process ambience, the surface is phosphorus-depleted with a partially H-terminated phosphorus surface. Atomic force microscopy (AFM) reveals that a high proportion of the surface is covered by Ga-rich islands. We conclude that the STM images of the samples after high-temperature annealing only reflect the flat regions of the partially H-terminated phosphorus face, whereas an increasing coverage with Ga-rich islands, as detected by AFM and AES, forms upon annealing and underlies the higher proportion of Ga in the XPS measurements.

Název v anglickém jazyce

Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

Popis výsledku anglicky

Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtual substrates, we investigate the atomic structure of the MOVPE (metalorganic vapor phase epitaxy)-prepared GaP(1 1 1)B surface (phosphorus face). We find that upon high-temperature annealing in the H2-based MOVPE process ambience, the surface is phosphorus-depleted with a partially H-terminated phosphorus surface. Atomic force microscopy (AFM) reveals that a high proportion of the surface is covered by Ga-rich islands. We conclude that the STM images of the samples after high-temperature annealing only reflect the flat regions of the partially H-terminated phosphorus face, whereas an increasing coverage with Ga-rich islands, as detected by AFM and AES, forms upon annealing and underlies the higher proportion of Ga in the XPS measurements.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC18-06970J" target="_blank" >GC18-06970J: Formování heterovalentních rozhraní: kombinované studium GaP/Si heterostruktur metodou fotoemise a ab initio DFT výpočtů.</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

534

Číslo periodika v rámci svazku

Dec

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000582367700004

EID výsledku v databázi Scopus

2-s2.0-85091073108