Quantum dots grown by metal-organic vapot phase epitax

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537997" target="_blank" >RIV/68378271:_____/20:00537997 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Quantum dots grown by metal-organic vapot phase epitax

Popis výsledku v původním jazyce

MOVPE-grown QDs have been prepared and studied by many MOVPE technological teams for more than 25 years, but their real current application is still limited. The situation is comparable with QWrs. In comparison with QWs, both of these structures are not mature. Materials that can be used for QD structures come from many semiconductor families like arsenide, antimonite, phosphide, telluride, and nitride binaries and ternaries. QD structure material choice (including substrate material like GaAs, Si, sapphire, SiC, perovskite, etc.) can drive emitted wavelength, influence temperature and structure stability, and, of course, the cost of devices. Complex internal QD device structures like QD size and shape, SRLs and spacers (materials and thicknesses), QD layer multiplicity for stacking-layer structure, material and thickness of the capping layer, and the system of buffer layers can affect QD device parameters and their possible applications.

Název v anglickém jazyce

Quantum dots grown by metal-organic vapot phase epitax

Popis výsledku anglicky

MOVPE-grown QDs have been prepared and studied by many MOVPE technological teams for more than 25 years, but their real current application is still limited. The situation is comparable with QWrs. In comparison with QWs, both of these structures are not mature. Materials that can be used for QD structures come from many semiconductor families like arsenide, antimonite, phosphide, telluride, and nitride binaries and ternaries. QD structure material choice (including substrate material like GaAs, Si, sapphire, SiC, perovskite, etc.) can drive emitted wavelength, influence temperature and structure stability, and, of course, the cost of devices. Complex internal QD device structures like QD size and shape, SRLs and spacers (materials and thicknesses), QD layer multiplicity for stacking-layer structure, material and thickness of the capping layer, and the system of buffer layers can affect QD device parameters and their possible applications.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

20th Conference of Czech and Slovak Physicists Proceedings

ISBN

978-80-89855-13-1

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

73-74

Název nakladatele

Slovak Physical Society, Czech Physical Society

Místo vydání

Košice

Místo konání akce

Prague

Datum konání akce

7. 9. 2020

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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