Positron structural analysis of ScN films deposited on MgO substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539092" target="_blank" >RIV/68378271:_____/20:00539092 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/20:10411152

Výsledek na webu

<a href="https://doi.org/10.12693/APhysPolA.137.209" target="_blank" >https://doi.org/10.12693/APhysPolA.137.209</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.12693/APhysPolA.137.209" target="_blank" >10.12693/APhysPolA.137.209</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Positron structural analysis of ScN films deposited on MgO substrate

Popis výsledku v původním jazyce

Scandium nitride (ScN) is a semiconductor with a rocksalt-structure that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. Two ScN films of 118 nm and 950 nm thicknesses were deposited at the same conditions on MgO (001) substrate by reactive magnetron sputtering. Poly-orientation of films was observed with first an epitaxial growth on MgO and then a change in the orientation growth due to the decrease of the adatom mobility during the film growth. Positron lifetime measurements showed a high concentration of nitrogen vacancies in both films with a slightly higher concentration for the thicker ScN film. Presence of nitrogen vacancies explains the values of direct band gaps of 2.53 +/- 0.01 eV, and 2.56 +/- 0.01 eV which has been measured on ScN films of 118 nm and 950 nm thicknesses, respectively.

Název v anglickém jazyce

Positron structural analysis of ScN films deposited on MgO substrate

Popis výsledku anglicky

Scandium nitride (ScN) is a semiconductor with a rocksalt-structure that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. Two ScN films of 118 nm and 950 nm thicknesses were deposited at the same conditions on MgO (001) substrate by reactive magnetron sputtering. Poly-orientation of films was observed with first an epitaxial growth on MgO and then a change in the orientation growth due to the decrease of the adatom mobility during the film growth. Positron lifetime measurements showed a high concentration of nitrogen vacancies in both films with a slightly higher concentration for the thicker ScN film. Presence of nitrogen vacancies explains the values of direct band gaps of 2.53 +/- 0.01 eV, and 2.56 +/- 0.01 eV which has been measured on ScN films of 118 nm and 950 nm thicknesses, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Physica Polonica. A

ISSN

0587-4246

e-ISSN

—

Svazek periodika

137

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

6

Strana od-do

209-214

Kód UT WoS článku

000529332100031

EID výsledku v databázi Scopus

2-s2.0-85083845973