Environmental stability and ageing of ScN thin films from XPS Ar+ depth profiling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27740%2F24%3A10255806" target="_blank" >RIV/61989100:27740/24:10255806 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/24:00598459 RIV/00216208:11320/24:10483285

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0169433224015800?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0169433224015800?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2024.160867" target="_blank" >10.1016/j.apsusc.2024.160867</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Environmental stability and ageing of ScN thin films from XPS Ar+ depth profiling

Popis výsledku v původním jazyce

A basic knowledge on chemical stability and reactivity of a wide band gap ScN semiconductor in the presence of air atmosphere, where O2 and H2O represent the main degradation or corrosive agents, is of vital importance for a long-term performance of ScN-based devices for thermoelectric applications. Here, we present a systematic XPS Ar+ depth profiling analysis and optical and TEM characterizations of naturally room temperature air-aged thin ScN films prepared by a high-temperature DC sputtering on MgO(0 0 1) and SiO2 substrates. We find that superior crystalline quality ScN/MgO films degrade weakly after their quick initial surface oxidation and/or hydrolysis. Their oxidation is rather local and associated with the film-penetrating void-like interfaces. Significant initial surface oxidation and subsequent bulk oxidation after ageing is, however, observed for polycrystalline ScN/SiO2 films. Ab initio calculations of pure ScN and ScN with diluted nitrogen vacancies and/or substitutional oxygen impurities, which assist our experimental research, reveal pronounced impact of these defects on the ScN electronic structure. The modeled compositions reflect homogeneously and weakly oxidized films, while the real films correspond to relatively pure ScN crystallites with interfaces rich in oxygen. (C) 2024 Elsevier B.V.

Název v anglickém jazyce

Environmental stability and ageing of ScN thin films from XPS Ar+ depth profiling

Popis výsledku anglicky

A basic knowledge on chemical stability and reactivity of a wide band gap ScN semiconductor in the presence of air atmosphere, where O2 and H2O represent the main degradation or corrosive agents, is of vital importance for a long-term performance of ScN-based devices for thermoelectric applications. Here, we present a systematic XPS Ar+ depth profiling analysis and optical and TEM characterizations of naturally room temperature air-aged thin ScN films prepared by a high-temperature DC sputtering on MgO(0 0 1) and SiO2 substrates. We find that superior crystalline quality ScN/MgO films degrade weakly after their quick initial surface oxidation and/or hydrolysis. Their oxidation is rather local and associated with the film-penetrating void-like interfaces. Significant initial surface oxidation and subsequent bulk oxidation after ageing is, however, observed for polycrystalline ScN/SiO2 films. Ab initio calculations of pure ScN and ScN with diluted nitrogen vacancies and/or substitutional oxygen impurities, which assist our experimental research, reveal pronounced impact of these defects on the ScN electronic structure. The modeled compositions reflect homogeneously and weakly oxidized films, while the real films correspond to relatively pure ScN crystallites with interfaces rich in oxygen. (C) 2024 Elsevier B.V.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

674

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

19

Strana od-do

nestránkováno

Kód UT WoS článku

001295721200001

EID výsledku v databázi Scopus

2-s2.0-85201122479