Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00539099" target="_blank" >RIV/68378271:_____/20:00539099 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1051/epjap/2020190253" target="_blank" >https://doi.org/10.1051/epjap/2020190253</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1051/epjap/2020190253" target="_blank" >10.1051/epjap/2020190253</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star

Popis výsledku v původním jazyce

Hydrogenated amorphous substoichiometric silicon carbide (a-SiC:H) diodes with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi‐transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of both diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-Si1-xCx:H significantly deteriorates diode I-V characteristic.

Název v anglickém jazyce

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star

Popis výsledku anglicky

Hydrogenated amorphous substoichiometric silicon carbide (a-SiC:H) diodes with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi‐transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy analyses. Current-voltage (I-V) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of both diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-Si1-xCx:H significantly deteriorates diode I-V characteristic.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

European Physical Journal-Applied Physics

ISSN

1286-0042

e-ISSN

—

Svazek periodika

88

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

FR - Francouzská republika

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

000518694500002

EID výsledku v databázi Scopus

2-s2.0-85091898722