Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241254" target="_blank" >RIV/68407700:21460/15:00241254 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.jsap.jp/jjapproceedings/online/3-011104" target="_blank" >https://journals.jsap.jp/jjapproceedings/online/3-011104</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.7567/JJAPCP.3.011104" target="_blank" >10.7567/JJAPCP.3.011104</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

Popis výsledku v původním jazyce

The hydrogenated amorphous silicon (a-Si:H) based p-i-n diode structures Al/a-Si:H(p+)/ a-Si:H(i)/(silicides NPs/a-Si)x/a-Si:H(i)/a-Si:H(n+)/ITO/glass with multiple layers (x = 8,...,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi2, Mg2Si and Ca2Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I-V curves of the a-Si:H p-i-n diodes with embedded silicide NP multistructures have shown the maximalforward current for Ca2Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca2Si and Mg2Si NPs multistructures.

Název v anglickém jazyce

Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

Popis výsledku anglicky

The hydrogenated amorphous silicon (a-Si:H) based p-i-n diode structures Al/a-Si:H(p+)/ a-Si:H(i)/(silicides NPs/a-Si)x/a-Si:H(i)/a-Si:H(n+)/ITO/glass with multiple layers (x = 8,...,15) of the embedded narrow band semiconducting nanoparticle silicide (CrSi2, Mg2Si and Ca2Si) multistructures have been grown by combining the plasma enhanced chemical vapour deposition (PECVD) and the UHV reactive deposition epitaxy (RDE). Formation of silicide nanoparticles and multistructures has been confirmed in-situ by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and ex-situ by optical absorbance and Raman spectroscopies. The I-V curves of the a-Si:H p-i-n diodes with embedded silicide NP multistructures have shown the maximalforward current for Ca2Si nanoparticles. The room temperature electroluminescence has been observed in the near infrared region for diodes with embedded Ca2Si and Mg2Si NPs multistructures.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Conference and Summer School on Advanced Silicide Technology 2014

ISBN

978-4-86348-491-7

ISSN

—

e-ISSN

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Počet stran výsledku

8

Strana od-do

"011104-1"-"011104-8"

Název nakladatele

Kyushu Institute of Technology

Místo vydání

Tokyo

Místo konání akce

Tokyo

Datum konání akce

19. 7. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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