ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00540385" target="_blank" >RIV/68378271:_____/20:00540385 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Popis výsledku v původním jazyce

In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.n

Název v anglickém jazyce

ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Popis výsledku anglicky

In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů