Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F13%3A43918961" target="_blank" >RIV/49777513:23520/13:43918961 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2013.07.013" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.07.013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.07.013" target="_blank" >10.1016/j.tsf.2013.07.013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films

Popis výsledku v původním jazyce

In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 °C in He and (ii) 1700 °C in air. XPS studies showed that annealing to 1400 °C in He does not affect the chemical composition of the film, while annealing to 1700 °C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 °C in He are amorphous. A three layer structure was found in the film annealed to 1700 °C in air: the original amorphous Si-B-C-N base-layer, a

Název v anglickém jazyce

Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films

Popis výsledku anglicky

In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 °C in He and (ii) 1700 °C in air. XPS studies showed that annealing to 1400 °C in He does not affect the chemical composition of the film, while annealing to 1700 °C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 °C in He are amorphous. A three layer structure was found in the film annealed to 1700 °C in air: the original amorphous Si-B-C-N base-layer, a

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

542

Číslo periodika v rámci svazku

Neuveden

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

167-173

Kód UT WoS článku

000323859400028

EID výsledku v databázi Scopus

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