Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543404" target="_blank" >RIV/68378271:_____/21:00543404 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1021/acsami.0c21282" target="_blank" >https://doi.org/10.1021/acsami.0c21282</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.0c21282" target="_blank" >10.1021/acsami.0c21282</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography

Popis výsledku v původním jazyce

We investigate hole selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx. The fabrication process of these contacts involves an annealing step at temperatures above 750°C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy and Conductive Atomic Force Microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.n

Název v anglickém jazyce

Nanoscale study of the hole-selective passivating contacts with high thermal budget using C-AFM tomography

Popis výsledku anglicky

We investigate hole selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx. The fabrication process of these contacts involves an annealing step at temperatures above 750°C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy and Conductive Atomic Force Microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

13

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

9994-10000

Kód UT WoS článku

000626502700054

EID výsledku v databázi Scopus

2-s2.0-85102450293