In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00546089" target="_blank" >RIV/68378271:_____/21:00546089 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22340/21:43923006

Výsledek na webu

<a href="https://doi.org/10.1063/5.0057317" target="_blank" >https://doi.org/10.1063/5.0057317</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0057317" target="_blank" >10.1063/5.0057317</a>

Jazyk výsledku

angličtina

Název v původním jazyce

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

Popis výsledku v původním jazyce

Ultra-thin silver films of thicknesses of the order of 10 nm and less were prepared in different ambient conditions (vacuum, Ar, and N2) by pulsed laser deposition on glass and fused silica substrates. The in situ monitoring of electrical resistance of deposited films and optical emission spectroscopy of plasma were implemented as real-time analysis techniques. Change in the growth mechanism of the Ag layer in N2 ambient is expressed by an acceleration of the coalescence process, which shifts the percolation point toward lower mass thicknesses.The films prepared in vacuum and Ar ambient were found to be unstable for a final resistance in the range from 1 to 100MΩ while the films deposited in N2 revealed stable electrical resistance.n

Název v anglickém jazyce

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

Popis výsledku anglicky

Ultra-thin silver films of thicknesses of the order of 10 nm and less were prepared in different ambient conditions (vacuum, Ar, and N2) by pulsed laser deposition on glass and fused silica substrates. The in situ monitoring of electrical resistance of deposited films and optical emission spectroscopy of plasma were implemented as real-time analysis techniques. Change in the growth mechanism of the Ag layer in N2 ambient is expressed by an acceleration of the coalescence process, which shifts the percolation point toward lower mass thicknesses.The films prepared in vacuum and Ar ambient were found to be unstable for a final resistance in the range from 1 to 100MΩ while the films deposited in N2 revealed stable electrical resistance.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

130

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

085301

Kód UT WoS článku

000755022000001

EID výsledku v databázi Scopus

2-s2.0-85113704562