Towards an ideal high-κ HfO2–ZrO2-based dielectric

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00556440" target="_blank" >RIV/68378271:_____/21:00556440 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org" target="_blank" >https://doi.org</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d1nr02272e" target="_blank" >10.1039/d1nr02272e</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Towards an ideal high-κ HfO2–ZrO2-based dielectric

Popis výsledku v původním jazyce

The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted, if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2–ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P–E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)–antiferroelectric (AFE) characteristics. For this composition,the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films, the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL.

Název v anglickém jazyce

Towards an ideal high-κ HfO2–ZrO2-based dielectric

Popis výsledku anglicky

The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted, if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2–ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P–E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)–antiferroelectric (AFE) characteristics. For this composition,the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films, the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

2040-3372

Svazek periodika

13

Číslo periodika v rámci svazku

32

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

13631-13640

Kód UT WoS článku

000677449700001

EID výsledku v databázi Scopus

2-s2.0-85113301489