Effect of MOVPE growth conditions on germanium doped (In)GaN layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00560116" target="_blank" >RIV/68378271:_____/22:00560116 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Effect of MOVPE growth conditions on germanium doped (In)GaN layers

Popis výsledku v původním jazyce

The GaSb based structures were grown in an AIXTRON 200 system horizontal quartz reactor with RF heater, nonrotating graphite susceptor and equipped with Laytec EPIRAS 200TT RAS and True Temperature measurement. The precursors for the GaSb/InGaAsSb/AlGaAsSb structure we used trimethylindium TMIn, triethylgallium TEGa, tris‑tertiarybutylaluminium TtBAl, tertiarybutylarsine TBAs and triethylantimony TESb. As dopants diethylzinc DEZn and diethyltellur DETe has been used. Optimal technological conditions were found for the growth and doping of complex IR detector structure consisting GaSb, InGaAsSb and AlGaAsSb layers. Our results may help to understand the RAS in situ monitoring in InAs-GaSb system Processing and full characterization of grown eSWIR epi-structures are in progress.

Název v anglickém jazyce

Effect of MOVPE growth conditions on germanium doped (In)GaN layers

Popis výsledku anglicky

The GaSb based structures were grown in an AIXTRON 200 system horizontal quartz reactor with RF heater, nonrotating graphite susceptor and equipped with Laytec EPIRAS 200TT RAS and True Temperature measurement. The precursors for the GaSb/InGaAsSb/AlGaAsSb structure we used trimethylindium TMIn, triethylgallium TEGa, tris‑tertiarybutylaluminium TtBAl, tertiarybutylarsine TBAs and triethylantimony TESb. As dopants diethylzinc DEZn and diethyltellur DETe has been used. Optimal technological conditions were found for the growth and doping of complex IR detector structure consisting GaSb, InGaAsSb and AlGaAsSb layers. Our results may help to understand the RAS in situ monitoring in InAs-GaSb system Processing and full characterization of grown eSWIR epi-structures are in progress.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LTAIN19163" target="_blank" >LTAIN19163: Vývoj nitridových součástek pro energeticky úspornou rychlou výkonovou elektroniku</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů