Optical properties of epitaxially grown GaN:Ge thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00564769" target="_blank" >RIV/68378271:_____/22:00564769 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0336364" target="_blank" >https://hdl.handle.net/11104/0336364</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.omx.2022.100211" target="_blank" >10.1016/j.omx.2022.100211</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of epitaxially grown GaN:Ge thin films

Popis výsledku v původním jazyce

To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted. This study includes the measurements of radioluminescence and photoluminescence spectra, thermally stimulated luminescence as well as scintillation decay kinetics. The representative radio- and photoluminescence spectra are composed of two bands. The narrow and fast band peaking at about 3.4 eV is ascribed to excitons and the broad and slow defect-related band with the maximum at about 2.2 eV is produced by carbon occupying nitrogen site. It has been found that the decay kinetics and amplitude of the exciton and defect emission are sensitive to the Ge doping level. In particular, the exciton- and the defect-related luminescence become faster with increasing Ge content. Charge trapping processes were also affected by the Ge doping.n

Název v anglickém jazyce

Optical properties of epitaxially grown GaN:Ge thin films

Popis výsledku anglicky

To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted. This study includes the measurements of radioluminescence and photoluminescence spectra, thermally stimulated luminescence as well as scintillation decay kinetics. The representative radio- and photoluminescence spectra are composed of two bands. The narrow and fast band peaking at about 3.4 eV is ascribed to excitons and the broad and slow defect-related band with the maximum at about 2.2 eV is produced by carbon occupying nitrogen site. It has been found that the decay kinetics and amplitude of the exciton and defect emission are sensitive to the Ge doping level. In particular, the exciton- and the defect-related luminescence become faster with increasing Ge content. Charge trapping processes were also affected by the Ge doping.n

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials: X

ISSN

2590-1478

e-ISSN

—

Svazek periodika

16

Číslo periodika v rámci svazku

Oct.

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

100211

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85142136611