The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00561462" target="_blank" >RIV/68378271:_____/22:00561462 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.radmeas.2022.106842" target="_blank" >https://doi.org/10.1016/j.radmeas.2022.106842</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.radmeas.2022.106842" target="_blank" >10.1016/j.radmeas.2022.106842</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

Popis výsledku v původním jazyce

Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si were studied by means of radio-, photo- and thermally stimulated luminescence, scintillation decay kinetics, as well as electron paramagnetic resonance. Two luminescence bands were observed: the narrow and fast peaking at about 3.45 eV (ascribed to excitons) and the broad and slow one having maximum at about 2.2 eV (produced by the defect – a carbon occupying nitrogen site). The decay time and the intensity of exciton and defect-related emission exhibit dependence on the doping level of Si. Both bands are getting faster upon the increased Si content. Interestingly, the effect of Si on the conductivity properties of the GaN samples was observed by means of electron paramagnetic resonance.

Název v anglickém jazyce

The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

Popis výsledku anglicky

Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si were studied by means of radio-, photo- and thermally stimulated luminescence, scintillation decay kinetics, as well as electron paramagnetic resonance. Two luminescence bands were observed: the narrow and fast peaking at about 3.45 eV (ascribed to excitons) and the broad and slow one having maximum at about 2.2 eV (produced by the defect – a carbon occupying nitrogen site). The decay time and the intensity of exciton and defect-related emission exhibit dependence on the doping level of Si. Both bands are getting faster upon the increased Si content. Interestingly, the effect of Si on the conductivity properties of the GaN samples was observed by means of electron paramagnetic resonance.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GJ20-05497Y" target="_blank" >GJ20-05497Y: Nanoscintilátory na bázi ultrarychlých luminiscenčních struktur tvořených násobnými kvantovými jamami a komposity</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Measurements

ISSN

1350-4487

e-ISSN

1879-0925

Svazek periodika

157

Číslo periodika v rámci svazku

Sep

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

106842

Kód UT WoS článku

000888793800002

EID výsledku v databázi Scopus

2-s2.0-85135905981