Effects of metal layers on chemical vapor deposition of diamond films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00564910" target="_blank" >RIV/68378271:_____/22:00564910 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0336490" target="_blank" >https://hdl.handle.net/11104/0336490</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2478/jee-2022-0047" target="_blank" >10.2478/jee-2022-0047</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effects of metal layers on chemical vapor deposition of diamond films

Popis výsledku v původním jazyce

Here, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by MWCVD employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the MWCVD process. In the second concept, the diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.

Název v anglickém jazyce

Effects of metal layers on chemical vapor deposition of diamond films

Popis výsledku anglicky

Here, we present the influence of thin metal (Ni, Ir, Au) layers on diamond growth by MWCVD employing two different concepts. In the first concept, a flat substrate (GaN) was initially coated with a thin metal layer, then exposed to the MWCVD process. In the second concept, the diamond film was firstly formed, then it was overcoated with the metal layer and finally, once again exposed to the diamond MWCVD. It was confirmed that the Ni thin films (15 nm) hinder the formation of diamond crystals resulting in the formation of an amorphous carbon layer. Contrary to this finding, the Ir layer resulted in a successful overgrowth by the fully closed diamond film. However, by employing concept 2 (ie hybrid diamond/metal/diamond composite), the thin Ir layer was found to be unstable and transferred into the isolated clusters, which were overgrown by the diamond film. Using the Au/Ir (30/15 nm) bilayer system stabilized the metallization and no diamond growth was observed on the metal layer.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electrical Engineering - Elektrotechnický časopis

ISSN

1335-3632

e-ISSN

1339-309X

Svazek periodika

73

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

SK - Slovenská republika

Počet stran výsledku

5

Strana od-do

350-354

Kód UT WoS článku

000883793600007

EID výsledku v databázi Scopus

2-s2.0-85143055399