Correlated microscopy of electronic and material properties of graphene grown on diamond thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00478412" target="_blank" >RIV/68378271:_____/17:00478412 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/17:00315082

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Correlated microscopy of electronic and material properties of graphene grown on diamond thin films

Popis výsledku v původním jazyce

In this work we compare growth of graphene on diamond thin films that enable large area processing. We use films with different crystal size and surface roughness to obtain deeper insight into formation and properties of GoD. The diamond films are coated by a nm thin sputtered Ni layer and heated to 900°C in a forming gas atmosphere (H2/Ar) to initiate catalytic thermal CVD process. The samples are cleaned from residual Ni after the growth process. We employ scanning electron microscopy, Raman micro-spectroscopy and Kelvin probe force microscopy to correlate material, structural, and electronic properties of graphene on diamond. We show how grain size and grain boundaries influence graphene growth and material and electronic properties. For instance we show that the grain boundaries (with non-diamond carbon phases) in diamond films have an important role. They influence the electronic properties and they are beneficial for forming graphene on diamond higher quality.

Název v anglickém jazyce

Correlated microscopy of electronic and material properties of graphene grown on diamond thin films

Popis výsledku anglicky

In this work we compare growth of graphene on diamond thin films that enable large area processing. We use films with different crystal size and surface roughness to obtain deeper insight into formation and properties of GoD. The diamond films are coated by a nm thin sputtered Ni layer and heated to 900°C in a forming gas atmosphere (H2/Ar) to initiate catalytic thermal CVD process. The samples are cleaned from residual Ni after the growth process. We employ scanning electron microscopy, Raman micro-spectroscopy and Kelvin probe force microscopy to correlate material, structural, and electronic properties of graphene on diamond. We show how grain size and grain boundaries influence graphene growth and material and electronic properties. For instance we show that the grain boundaries (with non-diamond carbon phases) in diamond films have an important role. They influence the electronic properties and they are beneficial for forming graphene on diamond higher quality.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GF16-34856L" target="_blank" >GF16-34856L: Atomární a elektronické vlastnosti hetero-struktur grafén-diamant</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2016 8th International Conference on Nanomaterials - Research & Application. Conference proceedings

ISBN

978-80-87294-71-0

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

48-53

Název nakladatele

TANGER Ltd.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

19. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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