Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496453" target="_blank" >RIV/68378271:_____/18:00496453 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/18:00326895

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acs.jpcc.7b12334" target="_blank" >http://dx.doi.org/10.1021/acs.jpcc.7b12334</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.7b12334" target="_blank" >10.1021/acs.jpcc.7b12334</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

Popis výsledku v původním jazyce

Graphene on diamond has been attracting considerable attention due to the unique and highly beneficial features of this heterostructure for a range of electronic applications. Here, ultra-high vacuum X-ray photoelectron spectroscopy is used for in-situ analysis of the temperature dependence of the Ni-assisted thermally-induced graphitization process of intrinsic nanocrystalline diamond thin films (65 nm thickness, 50-80 nm grain size) on silicon wafer substrates. Three major stages of diamond film transformation are determined from XPS during the thermal annealing in the temperature range from 300 °C to 800 °C. The graphitization is facilitated by a disordered carbon interlayer that inherently forms between diamond and graphitic layers by Ni catalyst. Thus, the process results in formation of a multilayer heterostructure on silicon substrate.n

Název v anglickém jazyce

Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

Popis výsledku anglicky

Graphene on diamond has been attracting considerable attention due to the unique and highly beneficial features of this heterostructure for a range of electronic applications. Here, ultra-high vacuum X-ray photoelectron spectroscopy is used for in-situ analysis of the temperature dependence of the Ni-assisted thermally-induced graphitization process of intrinsic nanocrystalline diamond thin films (65 nm thickness, 50-80 nm grain size) on silicon wafer substrates. Three major stages of diamond film transformation are determined from XPS during the thermal annealing in the temperature range from 300 °C to 800 °C. The graphitization is facilitated by a disordered carbon interlayer that inherently forms between diamond and graphitic layers by Ni catalyst. Thus, the process results in formation of a multilayer heterostructure on silicon substrate.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

—

Svazek periodika

122

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

6629-6636

Kód UT WoS článku

000429080000014

EID výsledku v databázi Scopus

2-s2.0-85044762457