Possible approaches for combined use of xenon and gallium ion sources for task specific focused ion beam sample preparation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00566515" target="_blank" >RIV/68378271:_____/22:00566515 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Possible approaches for combined use of xenon and gallium ion sources for task specific focused ion beam sample preparation

Popis výsledku v původním jazyce

Gallium (Ga) is the most commonly used liquid metal ion source (LMIS) for commercial focused ion beam (FIB) instruments, and in terms of scanning electron microscopy (SEM), is also the most commonly used ion column in platform instruments called “dual-beams” (FIB-SEM). Although there are a few reasons why it is advantageous to use this type of source, e.g., Ga low melting point, long source life, high angular intensity with a small energy spread, etc., there are also disadvantages, which FIB users should avoid. One of those problems, often present in transmission electron microscopy (TEM) sample preparation (FIB-SEM prepared TEM lamellae), is implantation of Ga ions in the specimen. A few years ago, “dual-beams” with plasma source focused ion beam (PFIB-SEM) were introduced, preferably using noble gas Xenon (Xe) ions. Here, we would like to demonstrate various possible approaches for combined use of these powerful platform instruments.

Název v anglickém jazyce

Possible approaches for combined use of xenon and gallium ion sources for task specific focused ion beam sample preparation

Popis výsledku anglicky

Gallium (Ga) is the most commonly used liquid metal ion source (LMIS) for commercial focused ion beam (FIB) instruments, and in terms of scanning electron microscopy (SEM), is also the most commonly used ion column in platform instruments called “dual-beams” (FIB-SEM). Although there are a few reasons why it is advantageous to use this type of source, e.g., Ga low melting point, long source life, high angular intensity with a small energy spread, etc., there are also disadvantages, which FIB users should avoid. One of those problems, often present in transmission electron microscopy (TEM) sample preparation (FIB-SEM prepared TEM lamellae), is implantation of Ga ions in the specimen. A few years ago, “dual-beams” with plasma source focused ion beam (PFIB-SEM) were introduced, preferably using noble gas Xenon (Xe) ions. Here, we would like to demonstrate various possible approaches for combined use of these powerful platform instruments.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů