Ultraviolet-C photoresponsivity using fabricated TiO2 thin films and transimpedance-amplifier-based test setup

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00566734" target="_blank" >RIV/68378271:_____/22:00566734 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0338022" target="_blank" >https://hdl.handle.net/11104/0338022</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/s22218176" target="_blank" >10.3390/s22218176</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ultraviolet-C photoresponsivity using fabricated TiO2 thin films and transimpedance-amplifier-based test setup

Popis výsledku v původním jazyce

We report on fabricated titanium dioxide (TiO2) thin films along with a transimpedance amplifier (TIA) test setup as a photoconductivity detector (sensor) in the ultraviolet-C (UV-C) wavelength region, particularly at 260 nm. TiO2 thin films deposited on high-resistivity undoped siliconsubstrate at thicknesses of 100, 500, and 1000 nm exhibited photoresponsivities of 81.6, 55.6, and 19.6 mA/W, respectively, at 30 V bias voltage. Despite improvements in the crystallinity of the thicker films, the decrease in photocurrent, photoconductivity, photoconductance, and photoresponsivity in thicker films is attributed to an increased number of defects. Varying the thickness of the film can, however, be leveraged to control the wavelength response of the detector. Future development of a chip-based portable UV-C detector using TiO2 thin films will open new opportunities for a wide range of applications.

Název v anglickém jazyce

Ultraviolet-C photoresponsivity using fabricated TiO2 thin films and transimpedance-amplifier-based test setup

Popis výsledku anglicky

We report on fabricated titanium dioxide (TiO2) thin films along with a transimpedance amplifier (TIA) test setup as a photoconductivity detector (sensor) in the ultraviolet-C (UV-C) wavelength region, particularly at 260 nm. TiO2 thin films deposited on high-resistivity undoped siliconsubstrate at thicknesses of 100, 500, and 1000 nm exhibited photoresponsivities of 81.6, 55.6, and 19.6 mA/W, respectively, at 30 V bias voltage. Despite improvements in the crystallinity of the thicker films, the decrease in photocurrent, photoconductivity, photoconductance, and photoresponsivity in thicker films is attributed to an increased number of defects. Varying the thickness of the film can, however, be leveraged to control the wavelength response of the detector. Future development of a chip-based portable UV-C detector using TiO2 thin films will open new opportunities for a wide range of applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Fyzika pevných látek pro 21. století</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Sensors

ISSN

1424-8220

e-ISSN

1424-8220

Svazek periodika

22

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

14

Strana od-do

8176

Kód UT WoS článku

000881592200001

EID výsledku v databázi Scopus

2-s2.0-85141880222