Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00568238" target="_blank" >RIV/68378271:_____/22:00568238 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1361-6528/ac79bb" target="_blank" >https://doi.org/10.1088/1361-6528/ac79bb</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6528/ac79bb" target="_blank" >10.1088/1361-6528/ac79bb</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure

Popis výsledku v původním jazyce

To improve the endurance and polarization switching speed of Hf1−xZrxO2 (HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2+ZrO2 (HZZ) nanolaminate structure. Three films with different ZrO2 interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.92 nm) and six ZrO2 (∼0.53 nm) layers, they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times.

Název v anglickém jazyce

Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure

Popis výsledku anglicky

To improve the endurance and polarization switching speed of Hf1−xZrxO2 (HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2+ZrO2 (HZZ) nanolaminate structure. Three films with different ZrO2 interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.92 nm) and six ZrO2 (∼0.53 nm) layers, they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanotechnology

ISSN

0957-4484

e-ISSN

1361-6528

Svazek periodika

33

Číslo periodika v rámci svazku

39

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

395205

Kód UT WoS článku

000822099100001

EID výsledku v databázi Scopus

2-s2.0-85134426316