Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00569418" target="_blank" >RIV/68378271:_____/22:00569418 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_06012.pdf" target="_blank" >https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_06012.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1051/epjconf/202226606012" target="_blank" >10.1051/epjconf/202226606012</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks

Popis výsledku v původním jazyce

Single-short las. crystalliz. of Ge/Si multilayer stacks consisting of alternating amorphous nanosized films of silicon and germanium using near- and mid-infrared femtosec. and picosec. las. pulses.The phase composition of the irradiated stacks was investigated by the Raman scattering technique.Several non-ablative regimes of crystalliz. were found,from partial crystalliz. of germanium without intermixing the Ge/Si layers to complete intermixing of the layers with formation of GexSi1-x solid alloys.The roles of one- and two-photon absorption,thermal and non-thermal melting processes,and laser-induced stresses in selective pico- and femtosecond laser annealing are analysed based on theoretical estimations and comparison with experimental data.It is concluded that,due to a mismatch of the thermal expansion coefficients between the adjacent stack layers,efficient explosive solid-phase crystallization of the Ge layers is possible at relatively low temperatures,well below the melting point.

Název v anglickém jazyce

Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks

Popis výsledku anglicky

Single-short las. crystalliz. of Ge/Si multilayer stacks consisting of alternating amorphous nanosized films of silicon and germanium using near- and mid-infrared femtosec. and picosec. las. pulses.The phase composition of the irradiated stacks was investigated by the Raman scattering technique.Several non-ablative regimes of crystalliz. were found,from partial crystalliz. of germanium without intermixing the Ge/Si layers to complete intermixing of the layers with formation of GexSi1-x solid alloys.The roles of one- and two-photon absorption,thermal and non-thermal melting processes,and laser-induced stresses in selective pico- and femtosecond laser annealing are analysed based on theoretical estimations and comparison with experimental data.It is concluded that,due to a mismatch of the thermal expansion coefficients between the adjacent stack layers,efficient explosive solid-phase crystallization of the Ge layers is possible at relatively low temperatures,well below the melting point.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

EPJ Web of Conferences

ISBN

—

ISSN

2100-014X

e-ISSN

2100-014X

Počet stran výsledku

2

Strana od-do

06012

Název nakladatele

EDP Science

Místo vydání

Les Ulis

Místo konání akce

Porto

Datum konání akce

12. 9. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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