Low temperature growth of nanocrystalline diamond: Insight thermal property

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00572859" target="_blank" >RIV/68378271:_____/23:00572859 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0343429" target="_blank" >https://hdl.handle.net/11104/0343429</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2023.110070" target="_blank" >10.1016/j.diamond.2023.110070</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low temperature growth of nanocrystalline diamond: Insight thermal property

Popis výsledku v původním jazyce

One of the limitations of materials for high-power devices and structural coatings applications is heat dissipation. Diamond is a suitable material for heat distribution due to its high thermal conductivity. Nevertheless, it is usually grown at high temperature (800–1200 °C), which limits its use as a coating for substrates vulnerable to degradation at high temperatures. In this work, it is studied the effect of the distance between the plasma source and substrate on the growth of nanocrystalline diamond layers on silicon substrates at low temperature (<450 °C) by microwave linear antenna plasma enhanced chemical vapour deposition (MW-LA-PECVD) in pulse mode. The nanocrystalline diamond films have been analysed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Finally, the superficial thermal conductivity of the diamond layers was determined by scanning thermal microscopy-AFM (SThM-AFM).

Název v anglickém jazyce

Low temperature growth of nanocrystalline diamond: Insight thermal property

Popis výsledku anglicky

One of the limitations of materials for high-power devices and structural coatings applications is heat dissipation. Diamond is a suitable material for heat distribution due to its high thermal conductivity. Nevertheless, it is usually grown at high temperature (800–1200 °C), which limits its use as a coating for substrates vulnerable to degradation at high temperatures. In this work, it is studied the effect of the distance between the plasma source and substrate on the growth of nanocrystalline diamond layers on silicon substrates at low temperature (<450 °C) by microwave linear antenna plasma enhanced chemical vapour deposition (MW-LA-PECVD) in pulse mode. The nanocrystalline diamond films have been analysed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Finally, the superficial thermal conductivity of the diamond layers was determined by scanning thermal microscopy-AFM (SThM-AFM).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

137

Číslo periodika v rámci svazku

Aug.

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

110070

Kód UT WoS článku

001022231900001

EID výsledku v databázi Scopus

2-s2.0-85162032536