Surface structure of MOVPE-prepared As-modified Si(100) substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00597597" target="_blank" >RIV/68378271:_____/24:00597597 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0355626" target="_blank" >https://hdl.handle.net/11104/0355626</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2024.160879" target="_blank" >10.1016/j.apsusc.2024.160879</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Surface structure of MOVPE-prepared As-modified Si(100) substrates

Popis výsledku v původním jazyce

In the pursuit of high-efficiency tandem devices for solar energy conversion based on III-V-semiconductors, low-defect III-V nucleation on Si(100) substrates is essential. Here, hydrogen and arsenic are key ingredients in all growth processes with respect to industrially scalable metalorganic vapor phase epitaxy. Our study provides insight into Si(100) surface preparation for the initial stage of III-V nucleation. The samples investigated, prepared on substrates with different offcut angles, show single domain surfaces consisting of rows of preferentially buckled dimers. Low energy electron diffraction and reflection anisotropy spectroscopy confirm well-defined (1 × 2)/(2 × 1) majority domains. Fourier-transform infrared spectroscopy revealed hydrogen bonding to the surface dimers, while no impurities were found by XPS. Density functional theory calculations support the experimental results and reveal a novel surface motif of H-passivated Si-As mixed dimers.

Název v anglickém jazyce

Surface structure of MOVPE-prepared As-modified Si(100) substrates

Popis výsledku anglicky

In the pursuit of high-efficiency tandem devices for solar energy conversion based on III-V-semiconductors, low-defect III-V nucleation on Si(100) substrates is essential. Here, hydrogen and arsenic are key ingredients in all growth processes with respect to industrially scalable metalorganic vapor phase epitaxy. Our study provides insight into Si(100) surface preparation for the initial stage of III-V nucleation. The samples investigated, prepared on substrates with different offcut angles, show single domain surfaces consisting of rows of preferentially buckled dimers. Low energy electron diffraction and reflection anisotropy spectroscopy confirm well-defined (1 × 2)/(2 × 1) majority domains. Fourier-transform infrared spectroscopy revealed hydrogen bonding to the surface dimers, while no impurities were found by XPS. Density functional theory calculations support the experimental results and reveal a novel surface motif of H-passivated Si-As mixed dimers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC18-06970J" target="_blank" >GC18-06970J: Formování heterovalentních rozhraní: kombinované studium GaP/Si heterostruktur metodou fotoemise a ab initio DFT výpočtů.</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

675

Číslo periodika v rámci svazku

Nov

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

160879

Kód UT WoS článku

001298042400001

EID výsledku v databázi Scopus

2-s2.0-85201234835