Electronic band structure vs intrinsic antisite doping in the MBE grown films MnTe · Bi(2-x)Te3(1-x/2) (0 ≥ x < 2): Evidence from spectroscopic ellipsometry and infrared studies

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00603632" target="_blank" >RIV/68378271:_____/24:00603632 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/5.0238665" target="_blank" >https://doi.org/10.1063/5.0238665</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0238665" target="_blank" >10.1063/5.0238665</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic band structure vs intrinsic antisite doping in the MBE grown films MnTe · Bi(2-x)Te3(1-x/2) (0 ≥ x < 2): Evidence from spectroscopic ellipsometry and infrared studies

Popis výsledku v původním jazyce

Intrinsic antisite defects influence the electronic and magnetic properties of antiferromagnetic topological insulators in the MnTe-Bi2Te3 family. These defects affect the position of the Fermi level and hinder the exploration of Dirac states. In this study, films with varying compositions of Bi and Te, ranging from MnTe to MnBi2Te4, were grown using molecular beam epitaxy on silicon substrates. The optical properties of these films were investigated using spectroscopic ellipsometry in the energy range of 0.5 to 6.5 electron volts, along with infrared reflectance and transmittance measurements. The analysis of optical spectra revealed that as the Bi and Te content increased, the dielectric function changed significantly. The imaginary part of the dielectric function showed a shift in its peak towards lower photon energies, which is characteristic of the final composition. Additionally, the stoichiometric MnBi2Te4 film exhibited an optical response associated with intrinsic antisite doping in the far-infrared range. However, in films with lower Bi and Te concentrations, the contribution from charge carriers was reduced. These changes in optical properties highlight the role of stoichiometry in controlling the electronic band structure and optical spectral weight distribution.

Název v anglickém jazyce

Electronic band structure vs intrinsic antisite doping in the MBE grown films MnTe · Bi(2-x)Te3(1-x/2) (0 ≥ x < 2): Evidence from spectroscopic ellipsometry and infrared studies

Popis výsledku anglicky

Intrinsic antisite defects influence the electronic and magnetic properties of antiferromagnetic topological insulators in the MnTe-Bi2Te3 family. These defects affect the position of the Fermi level and hinder the exploration of Dirac states. In this study, films with varying compositions of Bi and Te, ranging from MnTe to MnBi2Te4, were grown using molecular beam epitaxy on silicon substrates. The optical properties of these films were investigated using spectroscopic ellipsometry in the energy range of 0.5 to 6.5 electron volts, along with infrared reflectance and transmittance measurements. The analysis of optical spectra revealed that as the Bi and Te content increased, the dielectric function changed significantly. The imaginary part of the dielectric function showed a shift in its peak towards lower photon energies, which is characteristic of the final composition. Additionally, the stoichiometric MnBi2Te4 film exhibited an optical response associated with intrinsic antisite doping in the far-infrared range. However, in films with lower Bi and Te concentrations, the contribution from charge carriers was reduced. These changes in optical properties highlight the role of stoichiometry in controlling the electronic band structure and optical spectral weight distribution.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

1077-3118

Svazek periodika

125

Číslo periodika v rámci svazku

26

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

262404

Kód UT WoS článku

001386148900016

EID výsledku v databázi Scopus

2-s2.0-85213061977