Femtosecond laser crystallization of ultrathin a-Ge films in multilayer stacks with silicon layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640161" target="_blank" >RIV/68378271:_____/25:00640161 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/25:00386373

Výsledek na webu

<a href="https://hdl.handle.net/11104/0370584" target="_blank" >https://hdl.handle.net/11104/0370584</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/app152011082" target="_blank" >10.3390/app152011082</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Femtosecond laser crystallization of ultrathin a-Ge films in multilayer stacks with silicon layers

Popis výsledku v původním jazyce

Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a multilayer structure consisting of alternating amorphous silicon and germanium films was annealed by mid-infrared (1500 nm) ultrashort (70 fs) laser pulses under single-shot and multi-shot irradiation conditions. We investigate selective crystallization of ultrathin (3.5 nm) a-Ge non-hydrogenated films, which are promising for the generation of highly photostable nanodots. Based on Raman spectroscopy analysis, we demonstrate that, in contrast to thicker (above 10 nm) Ge films, explosive stress-induced crystallization is suppressed in such ultrathin systems and proceeds via thermal melting. This is likely due to the islet structure of ultrathin films, which results in the formation of nanopores at the Si-Ge interface and reduces stress confinement during ultrashort laser heating.

Název v anglickém jazyce

Femtosecond laser crystallization of ultrathin a-Ge films in multilayer stacks with silicon layers

Popis výsledku anglicky

Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a multilayer structure consisting of alternating amorphous silicon and germanium films was annealed by mid-infrared (1500 nm) ultrashort (70 fs) laser pulses under single-shot and multi-shot irradiation conditions. We investigate selective crystallization of ultrathin (3.5 nm) a-Ge non-hydrogenated films, which are promising for the generation of highly photostable nanodots. Based on Raman spectroscopy analysis, we demonstrate that, in contrast to thicker (above 10 nm) Ge films, explosive stress-induced crystallization is suppressed in such ultrathin systems and proceeds via thermal melting. This is likely due to the islet structure of ultrathin films, which results in the formation of nanopores at the Si-Ge interface and reduces stress confinement during ultrashort laser heating.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

<a href="/cs/project/EH22_008%2F0004596" target="_blank" >EH22_008/0004596: Senzory a detektory pro informační společnost budoucnosti</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Sciences-Basel

ISSN

2076-3417

e-ISSN

2076-3417

Svazek periodika

15

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

12

Strana od-do

11082

Kód UT WoS článku

001602625200001

EID výsledku v databázi Scopus

2-s2.0-105020242522