Defect investigation in irradiated ATLAS18 ITk Strip Sensors using transient spectroscopy techniques

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F25%3A00640827" target="_blank" >RIV/68378271:_____/25:00640827 - isvavai.cz</a>

Výsledek na webu

<a href="https://hdl.handle.net/11104/0375146" target="_blank" >https://hdl.handle.net/11104/0375146</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2025.170713" target="_blank" >10.1016/j.nima.2025.170713</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Defect investigation in irradiated ATLAS18 ITk Strip Sensors using transient spectroscopy techniques

Popis výsledku v původním jazyce

With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk). Comprising an active area of 165 m2, the outer detector layers will host strip modules, built with single-sided micro-strip sensors. The ATLAS18 main sensors were tested at different institutes in the collaboration for mechanical and electrical compliance with technical specifications, while technological parameters were verified on test structures from the same wafers before and after irradiation. Diodes fabricated as test structures were studied using variants of Deep-Level Transient Spectroscopy (DLTS). Irradiated diode samples were measured with Current-DLTS, using both electrical and photo-induced injection. Utilizing DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects were obtained. This was done to improve the precision of sensor simulations as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Moreover, previously observed features such as an increasing trend in the full depletion voltage after irradiation and little beneficial annealing in charge collection after high fluence irradiation of high energy protons were also investigated. Results obtained for samples with radiation damage from different sources at various fluences were compared.

Název v anglickém jazyce

Defect investigation in irradiated ATLAS18 ITk Strip Sensors using transient spectroscopy techniques

Popis výsledku anglicky

With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk). Comprising an active area of 165 m2, the outer detector layers will host strip modules, built with single-sided micro-strip sensors. The ATLAS18 main sensors were tested at different institutes in the collaboration for mechanical and electrical compliance with technical specifications, while technological parameters were verified on test structures from the same wafers before and after irradiation. Diodes fabricated as test structures were studied using variants of Deep-Level Transient Spectroscopy (DLTS). Irradiated diode samples were measured with Current-DLTS, using both electrical and photo-induced injection. Utilizing DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects were obtained. This was done to improve the precision of sensor simulations as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Moreover, previously observed features such as an increasing trend in the full depletion voltage after irradiation and little beneficial annealing in charge collection after high fluence irradiation of high energy protons were also investigated. Results obtained for samples with radiation damage from different sources at various fluences were compared.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research Section A

ISSN

0168-9002

e-ISSN

1872-9576

Svazek periodika

1080

Číslo periodika v rámci svazku

Nov

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

170713

Kód UT WoS článku

001516238500003

EID výsledku v databázi Scopus

2-s2.0-105008215293