Characterization and Calibration of Novel Semiconductor Detectors of Thermal Neutrons for ESA Space Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F11%3A00189684" target="_blank" >RIV/68407700:21220/11:00189684 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21670/11:00189684

Výsledek na webu

<a href="http://dx.doi.org/10.1109/NSSMIC.2011.6154526" target="_blank" >http://dx.doi.org/10.1109/NSSMIC.2011.6154526</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/NSSMIC.2011.6154526" target="_blank" >10.1109/NSSMIC.2011.6154526</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization and Calibration of Novel Semiconductor Detectors of Thermal Neutrons for ESA Space Applications

Popis výsledku v původním jazyce

For the study and detection of neutrons in space environments such as planetary and earth orbiting missions semiconductor silicon diode detectors have been characterized and calibrated at various thermal neutron sources. Two types of diodes adapted for thermal neutron detection were investigated: silicon MESA planar detectors equipped with thin 6LiF layers and silicon heterodiodes with a layer of natural boron or enriched 10B. The response and absolute detection efficiency have been measured. The influence of bias voltage and converter layer thickness were studied. As neutron sources we used a homogenous isotropic thermal neutron field by a set of PuBe radionuclide sources placed in a graphite pile as well as a parallel thermal neutron beam with high Cd ratio (10^5) and suppressed gamma background. Depending on the converter layer thickness and/or boron layer thickness as well as the choice of the threshold level, efficiencies of approximately 1% are obtained for both the silicon diode

Název v anglickém jazyce

Characterization and Calibration of Novel Semiconductor Detectors of Thermal Neutrons for ESA Space Applications

Popis výsledku anglicky

For the study and detection of neutrons in space environments such as planetary and earth orbiting missions semiconductor silicon diode detectors have been characterized and calibrated at various thermal neutron sources. Two types of diodes adapted for thermal neutron detection were investigated: silicon MESA planar detectors equipped with thin 6LiF layers and silicon heterodiodes with a layer of natural boron or enriched 10B. The response and absolute detection efficiency have been measured. The influence of bias voltage and converter layer thickness were studied. As neutron sources we used a homogenous isotropic thermal neutron field by a set of PuBe radionuclide sources placed in a graphite pile as well as a parallel thermal neutron beam with high Cd ratio (10^5) and suppressed gamma background. Depending on the converter layer thickness and/or boron layer thickness as well as the choice of the threshold level, efficiencies of approximately 1% are obtained for both the silicon diode

Druh

D - Stať ve sborníku

CEP obor

BF - Elementární částice a fyzika vysokých energií

OECD FORD obor

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Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

IEEE Nuclear Science Symposium and Medical Imaging Conference 2011

ISBN

978-1-4673-0118-3

ISSN

1082-3654

e-ISSN

—

Počet stran výsledku

5

Strana od-do

400-404

Název nakladatele

Omnipress

Místo vydání

Piscataway, New Jersey

Místo konání akce

Valencia

Datum konání akce

23. 10. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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