Implementation of SiC inverter for high frequency, medium voltage applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F14%3A00222475" target="_blank" >RIV/68407700:21220/14:00222475 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/MECHATRONIKA.2014.7018306" target="_blank" >http://dx.doi.org/10.1109/MECHATRONIKA.2014.7018306</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/MECHATRONIKA.2014.7018306" target="_blank" >10.1109/MECHATRONIKA.2014.7018306</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Implementation of SiC inverter for high frequency, medium voltage applications

Popis výsledku v původním jazyce

This paper describes the experiments with a custom build high frequency SiC inverter. The inverter uses the CCS050M12CM2 module with SiC MOSFET (1200V, 50A). A comparison of SiC MOSFET and Si IGBT modules both from datasheets and different scientific papers showed that SiC MOSFETs have higher efficiency, smaller losses and are capable to work with higher frequency than Si IGBTs. The characteristics of SiC MOSFET and Si IGBT inverter were measured in our laboratory and showed that SiC MOSFET had smaller power static losses and switching losses than Si IGBT, SiC MOSFET had higher efficiency and can operate under higher switching frequency than Si IGBT. The switching characteristics of SiC module have been measured up to a frequency of 30 kHz. The problem of gate-source voltage overshoot is considered here that is caused by parasitic capacitances and inductances. The correct value of damping resistor is tuned to suppress overshoot.

Název v anglickém jazyce

Implementation of SiC inverter for high frequency, medium voltage applications

Popis výsledku anglicky

This paper describes the experiments with a custom build high frequency SiC inverter. The inverter uses the CCS050M12CM2 module with SiC MOSFET (1200V, 50A). A comparison of SiC MOSFET and Si IGBT modules both from datasheets and different scientific papers showed that SiC MOSFETs have higher efficiency, smaller losses and are capable to work with higher frequency than Si IGBTs. The characteristics of SiC MOSFET and Si IGBT inverter were measured in our laboratory and showed that SiC MOSFET had smaller power static losses and switching losses than Si IGBT, SiC MOSFET had higher efficiency and can operate under higher switching frequency than Si IGBT. The switching characteristics of SiC module have been measured up to a frequency of 30 kHz. The problem of gate-source voltage overshoot is considered here that is caused by parasitic capacitances and inductances. The correct value of damping resistor is tuned to suppress overshoot.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

16th Mechatronika 2014

ISBN

978-80-214-4817-9

ISSN

—

e-ISSN

—

Počet stran výsledku

7

Strana od-do

477-483

Název nakladatele

Brno University of Technology

Místo vydání

Brno

Místo konání akce

Brno

Datum konání akce

3. 12. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000372145500072