Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD technique

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F16%3A00300637" target="_blank" >RIV/68407700:21220/16:00300637 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.surfcoat.2016.07.057" target="_blank" >http://dx.doi.org/10.1016/j.surfcoat.2016.07.057</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2016.07.057" target="_blank" >10.1016/j.surfcoat.2016.07.057</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD technique

Popis výsledku v původním jazyce

Vanadium and vanadiumoxide thin films are deposited by DC magnetron sputtering. A first series of pure vanadiumfilms are prepared by glancing angle deposition (GLAD). The incident angle α of the particle flux is systematically changed from 0 to 85°. For the second series, the angle α is kept at 85° and oxygen gas is injected during the growth by means of the reactive gas pulsing process (RGPP). A constant pulsing period P = 16 s is used whereas the oxygen injection time tON is varied from0 to 6 s. After depositing, films are annealed in air following 11 incremental cycles from roomtemperature up to 550 °C. For both series, the DC electrical resistivity is systematically measured during the annealing treatment. Vanadium films sputter deposited by GLAD become sensitive to the temperature for incident angles α higher than 60°. The most significant annealing effect is observed for films prepared with α=85° with a strong increase of resistivity from 2.6 x 10-5 to 4.9 x 10-3 Ωm. It is mainly assigned to the oxidation of GLAD vanadium films, which is favoured by the high porous morphology produced for the highest incident angles. The resistivity vs. temperature evolution is also measured and related to the occurrence of the VO2 phase. By combining GLAD and RGPP processes, the reversible variation of resistivity associated to the VO2 phase is even more pronounced. Oxygen pulsing during deposition and the voided structure produced for the highest incident angles enhance the oxidation of vanadiumthrough the films thickness. The porous architecture by GLAD and the oxygen injection by RGPP have to be carefully controlled and optimized for the growth of vanadium oxide compounds, especially to favour the formation of the VO2 phase.

Název v anglickém jazyce

Temperature dependence of electrical resistivity in oxidized vanadium films grown by the GLAD technique

Popis výsledku anglicky

Vanadium and vanadiumoxide thin films are deposited by DC magnetron sputtering. A first series of pure vanadiumfilms are prepared by glancing angle deposition (GLAD). The incident angle α of the particle flux is systematically changed from 0 to 85°. For the second series, the angle α is kept at 85° and oxygen gas is injected during the growth by means of the reactive gas pulsing process (RGPP). A constant pulsing period P = 16 s is used whereas the oxygen injection time tON is varied from0 to 6 s. After depositing, films are annealed in air following 11 incremental cycles from roomtemperature up to 550 °C. For both series, the DC electrical resistivity is systematically measured during the annealing treatment. Vanadium films sputter deposited by GLAD become sensitive to the temperature for incident angles α higher than 60°. The most significant annealing effect is observed for films prepared with α=85° with a strong increase of resistivity from 2.6 x 10-5 to 4.9 x 10-3 Ωm. It is mainly assigned to the oxidation of GLAD vanadium films, which is favoured by the high porous morphology produced for the highest incident angles. The resistivity vs. temperature evolution is also measured and related to the occurrence of the VO2 phase. By combining GLAD and RGPP processes, the reversible variation of resistivity associated to the VO2 phase is even more pronounced. Oxygen pulsing during deposition and the voided structure produced for the highest incident angles enhance the oxidation of vanadiumthrough the films thickness. The porous architecture by GLAD and the oxygen injection by RGPP have to be carefully controlled and optimized for the growth of vanadium oxide compounds, especially to favour the formation of the VO2 phase.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

<a href="/cs/project/LO1207" target="_blank" >LO1207: Podpora udržitelnosti Inovačního centra diagnostiky a aplikace materiálů na ČVUT-FS v Praze</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface and Coatings Technology

ISSN

0257-8972

e-ISSN

—

Svazek periodika

304

Číslo periodika v rámci svazku

October

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

476-485

Kód UT WoS článku

000384775900053

EID výsledku v databázi Scopus

2-s2.0-84978859545