Dielectric absorption correlated to ferromagnetic behavior in (Cr, Ni)-codoped 4H-SiC for microwave applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21220%2F22%3A00352777" target="_blank" >RIV/68407700:21220/22:00352777 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.molstruc.2021.131462" target="_blank" >https://doi.org/10.1016/j.molstruc.2021.131462</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.molstruc.2021.131462" target="_blank" >10.1016/j.molstruc.2021.131462</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Dielectric absorption correlated to ferromagnetic behavior in (Cr, Ni)-codoped 4H-SiC for microwave applications

Popis výsledku v původním jazyce

For (Cr, Ni)-codoped 4 H silicon carbide SiC, electronic/optical properties are calculated, and a ferromag-netic (FM) order is detected. Doping Ni at Si sites should not destroy the effective coupling of the spins induced by Cr, could enormously boost the quality of absorbing electromagnetic waves, and acts as resist coatings for Cr-doped 4 H-SiC. The metallic character shown by (Ni, Cr)-codoped 4H-SiC allow us using it in microwave circuits. Its FM order is mainly due to Cr impurities, so that the strong FM coupling orig-inates from p-d hybridization interaction. Our results show that substituting Al for Ni either in (Al, Cr) or (Al, Cr)-doped 4H-SiC may improve the magnetism of 4H-SiCand enhance its microwave absorbing properties in the mm-wave band.

Název v anglickém jazyce

Dielectric absorption correlated to ferromagnetic behavior in (Cr, Ni)-codoped 4H-SiC for microwave applications

Popis výsledku anglicky

For (Cr, Ni)-codoped 4 H silicon carbide SiC, electronic/optical properties are calculated, and a ferromag-netic (FM) order is detected. Doping Ni at Si sites should not destroy the effective coupling of the spins induced by Cr, could enormously boost the quality of absorbing electromagnetic waves, and acts as resist coatings for Cr-doped 4 H-SiC. The metallic character shown by (Ni, Cr)-codoped 4H-SiC allow us using it in microwave circuits. Its FM order is mainly due to Cr impurities, so that the strong FM coupling orig-inates from p-d hybridization interaction. Our results show that substituting Al for Ni either in (Al, Cr) or (Al, Cr)-doped 4H-SiC may improve the magnetism of 4H-SiCand enhance its microwave absorbing properties in the mm-wave band.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Molecular Structure

ISSN

0022-2860

e-ISSN

1872-8014

Svazek periodika

1248

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000702899100003

EID výsledku v databázi Scopus

2-s2.0-85115014074