Identifikace parametrů modelů polovodičových prvků užitím optimalizačních metod

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F07%3A03136149" target="_blank" >RIV/68407700:21230/07:03136149 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques

Popis výsledku v původním jazyce

The optimization is an indispensable tool for extracting the parameters of any complicated models. Hence, advanced optimization techniques are also necessary for identifying the model parameters of semiconductor devices because their current models are very sophisticated (especially the BJT and MOSFET ones). The equations of such models contain typically one hundred parameters. Therefore, the measurement and particularly identification of the full set of the model parameters is very difficult. In the paper, an optimization method is presented which is applicable for the identifications of very complicated models using a relatively small number of iterations. The algorithm has been implemented into the original software tool C.I.A. (Circuit InteractiveAnalyzer) to its static and dynamic analysis modes. Therefore, the optimization is able to identify both direct-current and capacitance models of semiconductor devices. The process is demonstrated with various transistors.

Název v anglickém jazyce

Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques

Popis výsledku anglicky

The optimization is an indispensable tool for extracting the parameters of any complicated models. Hence, advanced optimization techniques are also necessary for identifying the model parameters of semiconductor devices because their current models are very sophisticated (especially the BJT and MOSFET ones). The equations of such models contain typically one hundred parameters. Therefore, the measurement and particularly identification of the full set of the model parameters is very difficult. In the paper, an optimization method is presented which is applicable for the identifications of very complicated models using a relatively small number of iterations. The algorithm has been implemented into the original software tool C.I.A. (Circuit InteractiveAnalyzer) to its static and dynamic analysis modes. Therefore, the optimization is able to identify both direct-current and capacitance models of semiconductor devices. The process is demonstrated with various transistors.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F05%2F0277" target="_blank" >GA102/05/0277: Obvody v proudovém a smíšeném módu pro zpracování analogových signálů</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2007

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Computing and Information Technology

ISSN

1330-1136

e-ISSN

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Svazek periodika

15

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

HR - Chorvatská republika

Počet stran výsledku

8

Strana od-do

331-338

Kód UT WoS článku

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EID výsledku v databázi Scopus

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