Design of SMA 50 Ohm Load Using 3D EM Field Simulator: Comparison with Reality

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A00142687" target="_blank" >RIV/68407700:21230/08:00142687 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Design of SMA 50 Ohm Load Using 3D EM Field Simulator: Comparison with Reality

Popis výsledku v původním jazyce

The subject of this paper is to provide a comparison of 3D EM field simulation results of 0603 size SMD resistors with corresponding real data obtained by precise vector measurements. The simulated results were obtained by 3D EM field simulator CST Microwave Studio with time-domain solver. The comparison is shown on a design of an optimized 50? load composed of a common SMA flange connector and a set of 0603 size SMD resistors. The resistors are soldered between the inner conductor of the coaxial SMA connector and the flange. Several arrangements of the SMD resistors ranging from single-resistor arrangement to four-resistor pattern as well as different orientation of the resistive layer of the SMD resistors are discussed. Step discontinuity of the inner conductor of a real SMA connector is subsequently also involved in 3D EM field simulation and these results are compared with precise vector measurements.

Název v anglickém jazyce

Design of SMA 50 Ohm Load Using 3D EM Field Simulator: Comparison with Reality

Popis výsledku anglicky

The subject of this paper is to provide a comparison of 3D EM field simulation results of 0603 size SMD resistors with corresponding real data obtained by precise vector measurements. The simulated results were obtained by 3D EM field simulator CST Microwave Studio with time-domain solver. The comparison is shown on a design of an optimized 50? load composed of a common SMA flange connector and a set of 0603 size SMD resistors. The resistors are soldered between the inner conductor of the coaxial SMA connector and the flange. Several arrangements of the SMD resistors ranging from single-resistor arrangement to four-resistor pattern as well as different orientation of the resistive layer of the SMD resistors are discussed. Step discontinuity of the inner conductor of a real SMA connector is subsequently also involved in 3D EM field simulation and these results are compared with precise vector measurements.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GD102%2F08%2FH027" target="_blank" >GD102/08/H027: Pokročilé metody, struktury a komponenty elektronické bezdrátové komunikace</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 14th Conference on Microwave Techniques COMITE 2008

ISBN

978-1-4244-2137-4

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Československá sekce IEEE

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

23. 4. 2008

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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