NMOS a PMOS translineární násobičkové buňky pro zpracování signálu v proudovém módu

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F08%3A03147311" target="_blank" >RIV/68407700:21230/08:03147311 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

NMOS and PMOS Translinear Multiplying Cell for Current-Mode Signal Processing

Popis výsledku v původním jazyce

Paper describes NMOS and PMOS translinear cell which multiplies the current signals and which can be used for the current-mode signal processing. The translinear cell consists of NMOS or PMOS transistors that are treated in the sub-threshold conduction region. In this region the transistors exhibit an exponential dependency of the drain current versus the gate voltage and thus the translinear principle can be used for description of the functionality. Operation region of the cell is limited by the validity of the exponential dependency and also by the transistors leakage currents. Significant error is also induced by the auxiliary current mirrors which are biasing the cells. Channel length modulation effect causes error of the input signals and thus the output signal is affected by the multiplicative error. Paper presents basic idea of the multiplying cell, presents results of simulations in CADENCE and also presents results of measurements on real structure composed using dis. tran.

Název v anglickém jazyce

NMOS and PMOS Translinear Multiplying Cell for Current-Mode Signal Processing

Popis výsledku anglicky

Paper describes NMOS and PMOS translinear cell which multiplies the current signals and which can be used for the current-mode signal processing. The translinear cell consists of NMOS or PMOS transistors that are treated in the sub-threshold conduction region. In this region the transistors exhibit an exponential dependency of the drain current versus the gate voltage and thus the translinear principle can be used for description of the functionality. Operation region of the cell is limited by the validity of the exponential dependency and also by the transistors leakage currents. Significant error is also induced by the auxiliary current mirrors which are biasing the cells. Channel length modulation effect causes error of the input signals and thus the output signal is affected by the multiplicative error. Paper presents basic idea of the multiplying cell, presents results of simulations in CADENCE and also presents results of measurements on real structure composed using dis. tran.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ASDAM 2008 Conference Proceedings

ISBN

978-1-4244-2325-5

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Slovak University of Technology

Místo vydání

Bratislava

Místo konání akce

Smolenice

Datum konání akce

12. 10. 2008

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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