Modelling of sputtering yield amplification effect in reactive deposition of oxides

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00168535" target="_blank" >RIV/68407700:21230/10:00168535 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Modelling of sputtering yield amplification effect in reactive deposition of oxides

Popis výsledku v původním jazyce

Many reactive sputter deposition applications require high deposition rates. The primary limiting parameters in magnetron sputtering are the target power dissipation and sputtering yields of the target elements. In reactive deposition of oxides, the deposition rate is of particular interest due to the low sputtering yield of most commonly used oxides. By doping the sputtering target with heavy elements, it is possible to substantially enhance the sputtering yield and hence the deposition rate. Simulations of the partial sputtering yield values for aluminium from doped targets sputtered in reactive atmosphere have been carried out. Our simulations indicate that the sputtering yield amplification in reactive sputtering may lead to much higher relative deposition rate increase than in a nonreactive case. The highest relative increase may be achieved in the transition region but substantial increase is predicted also in the oxide mode.

Název v anglickém jazyce

Modelling of sputtering yield amplification effect in reactive deposition of oxides

Popis výsledku anglicky

Many reactive sputter deposition applications require high deposition rates. The primary limiting parameters in magnetron sputtering are the target power dissipation and sputtering yields of the target elements. In reactive deposition of oxides, the deposition rate is of particular interest due to the low sputtering yield of most commonly used oxides. By doping the sputtering target with heavy elements, it is possible to substantially enhance the sputtering yield and hence the deposition rate. Simulations of the partial sputtering yield values for aluminium from doped targets sputtered in reactive atmosphere have been carried out. Our simulations indicate that the sputtering yield amplification in reactive sputtering may lead to much higher relative deposition rate increase than in a nonreactive case. The highest relative increase may be achieved in the transition region but substantial increase is predicted also in the oxide mode.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP108%2F10%2F0218" target="_blank" >GAP108/10/0218: Pokročilé self-adaptivní povlaky s nízkým třením na bázi dichalkogenidů přechodových kovů s uhlíkem</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface & Coatings Technology

ISSN

0257-8972

e-ISSN

—

Svazek periodika

204

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000280048600019

EID výsledku v databázi Scopus

—