Sensing Circuit for CMOS One-time-programmable Memory Block

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Sensing Circuit for CMOS One-time-programmable Memory Block

Popis výsledku v původním jazyce

One-time-programmable (OTP) memory blocks are advantageously employed in recently fabricated ICs of many kinds of usage. This is due to their ability to widen the complexity and robustness of the ICs with no need of additional devices. The programmable cells serve mostly for so called in-package-tuning of submicron CMOS circuits and are used like logical trimmer. They are simply trimmed by burning of poly-Si fuses in each memory cell. The burning process is realized just by current in the order of mA flowing through the selected fuse. For correct operation of the memory cell, an efficient low power, low voltage sensing circuit was developed. Proposed circuit works from under 1V supply voltage, consuming under 20uA. The reading circuit was simulated within the 0.25 um CMOS process utilizing low threshold CMOS devices and the graphical results of the analysis and simulations where used for develepment of educational web tutorial for design system from Mentor Graphics.

Název v anglickém jazyce

Sensing Circuit for CMOS One-time-programmable Memory Block

Popis výsledku anglicky

One-time-programmable (OTP) memory blocks are advantageously employed in recently fabricated ICs of many kinds of usage. This is due to their ability to widen the complexity and robustness of the ICs with no need of additional devices. The programmable cells serve mostly for so called in-package-tuning of submicron CMOS circuits and are used like logical trimmer. They are simply trimmed by burning of poly-Si fuses in each memory cell. The burning process is realized just by current in the order of mA flowing through the selected fuse. For correct operation of the memory cell, an efficient low power, low voltage sensing circuit was developed. Proposed circuit works from under 1V supply voltage, consuming under 20uA. The reading circuit was simulated within the 0.25 um CMOS process utilizing low threshold CMOS devices and the graphical results of the analysis and simulations where used for develepment of educational web tutorial for design system from Mentor Graphics.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Králíky 2010

ISBN

978-80-214-4139-2

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

Brno University of Technology

Místo vydání

Brno

Místo konání akce

Králíky

Datum konání akce

30. 8. 2010

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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