3D Modeling of Assembly Influence on Packaged Transistors

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00185041" target="_blank" >RIV/68407700:21230/11:00185041 - isvavai.cz</a>
Výsledek na webu
<a href="http://www.arftg.org" target="_blank" >http://www.arftg.org</a>
DOI - Digital Object Identifier
—

Jazyk výsledku
angličtina
Název v původním jazyce
3D Modeling of Assembly Influence on Packaged Transistors
Popis výsledku v původním jazyce
Detailed analysis of 70-mil package and wafer scale package (WSP) based on the 3D field simulations is presented. It is shown that an assembly plays significant role in the package behavior. Simulation results confirm that the parameters of the package are varying with the change of the assembly-substrate parameters. The approach potentially makes possible to transfer parameters of a transistor corresponding to certain assembly to another assembly without necessity of new measurements. It is very promising in the design of amplifiers namely power amplifiers (PA).
Název v anglickém jazyce
3D Modeling of Assembly Influence on Packaged Transistors
Popis výsledku anglicky
Detailed analysis of 70-mil package and wafer scale package (WSP) based on the 3D field simulations is presented. It is shown that an assembly plays significant role in the package behavior. Simulation results confirm that the parameters of the package are varying with the change of the assembly-substrate parameters. The approach potentially makes possible to transfer parameters of a transistor corresponding to certain assembly to another assembly without necessity of new measurements. It is very promising in the design of amplifiers namely power amplifiers (PA).

Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Podobné výsledky(10)