Analysis of Finfet Characteristics with Gate Length Scalling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00223591" target="_blank" >RIV/68407700:21230/14:00223591 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.nanocon.eu/cz/" target="_blank" >http://www.nanocon.eu/cz/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of Finfet Characteristics with Gate Length Scalling

Popis výsledku v původním jazyce

The effect of gate length variations of a FinFET device (6 x 7 nm width and height) by performing 3D Silvaco TCAD simulations was investigated. In addition, comparative Atomistics ToolKit by QuantumWise simulations were done, with a view to TCAD / ATK functionality at quantum effects. Both systems use Non- Equilibrium Green Functions (NEGF) for electron quantum transport simulation. The ATK tool uses the real atom positions in the device crystal lattice for the Density Functional Theory (DFT) based calculations moreover. It is found that the gate length influences the drain current mostly for small voltages. Short gate transistors show the saturation current for clearly lower voltages, the saturation current for longer gates is achieved for higher voltages but get lower values. Electron transmission functionality of system's energy has been analyzed as well. The ATK uses more precise quantum models, but the time consumption is enormous for the relative large structures as FinFET. 3D TC

Název v anglickém jazyce

Analysis of Finfet Characteristics with Gate Length Scalling

Popis výsledku anglicky

The effect of gate length variations of a FinFET device (6 x 7 nm width and height) by performing 3D Silvaco TCAD simulations was investigated. In addition, comparative Atomistics ToolKit by QuantumWise simulations were done, with a view to TCAD / ATK functionality at quantum effects. Both systems use Non- Equilibrium Green Functions (NEGF) for electron quantum transport simulation. The ATK tool uses the real atom positions in the device crystal lattice for the Density Functional Theory (DFT) based calculations moreover. It is found that the gate length influences the drain current mostly for small voltages. Short gate transistors show the saturation current for clearly lower voltages, the saturation current for longer gates is achieved for higher voltages but get lower values. Electron transmission functionality of system's energy has been analyzed as well. The ATK uses more precise quantum models, but the time consumption is enormous for the relative large structures as FinFET. 3D TC

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2014 Conference Proceedings

ISBN

978-80-87294-55-0

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

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Název nakladatele

TANGER spol. s r.o.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

5. 11. 2014

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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