Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00230081" target="_blank" >RIV/68407700:21230/15:00230081 - isvavai.cz</a>

Výsledek na webu

<a href="http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041" target="_blank" >http://spie.org/Publications/Proceedings/Paper/10.1117/12.2179041</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2179041" target="_blank" >10.1117/12.2179041</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

Popis výsledku v původním jazyce

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. We demonstrated that a 4H-SiC 80?m thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350?m thick 4H-SiC substrate we produced an array of 275?m deep and 1000?m to 3000?m of diameter blind holes without damaging the 2?m AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design.

Název v anglickém jazyce

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

Popis výsledku anglicky

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. We demonstrated that a 4H-SiC 80?m thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350?m thick 4H-SiC substrate we produced an array of 275?m deep and 1000?m to 3000?m of diameter blind holes without damaging the 2?m AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems

ISBN

978-1-62841-639-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Barcelona

Datum konání akce

4. 5. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000357978500064