MICRO STRUCTURING OF BULK SIC SUBSTRATES BY FEMTOSECOND LASER ABLATION

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00305331" target="_blank" >RIV/68407700:21230/16:00305331 - isvavai.cz</a>

Výsledek na webu

<a href="http://kf.elf.stuba.sk/~apcom/apcom16/" target="_blank" >http://kf.elf.stuba.sk/~apcom/apcom16/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

MICRO STRUCTURING OF BULK SIC SUBSTRATES BY FEMTOSECOND LASER ABLATION

Popis výsledku v původním jazyce

SiC is a material basis for pressure and strain sensors used in harsh thermal environment conditions. For such sensor devices, piezoelectric III-N compounds, especially gallium nitride (GaN)-related heterostructures on appropriate tailored SiC diaphragms are often used. We demonstrated that diaphragms can be fabricated faster with laser ablation than by reactive ion etching. However, laser ablation frequently causes pinholes in SiC membranes provoking increased risk to damage the III-N heterostructure by the fabrication process. Our experiments confirmed that pinhole defects in the ablated membranes are initiated by ripple structures related to the polarization of the laser. We developed an ablation technique inhibiting the formation of pin holes caused by laser induced periodic surface structures (LIPSS). In addition we tested the hypothesis that LIPSS in SiC act like slot waveguides performing a numerical study of light propagation in LIPSS. The results showed that laser intensity is enhanced inside LIPSS which supports the experimental ablation findings in the formation of pinholes and led us to effective countermeasures.

Název v anglickém jazyce

MICRO STRUCTURING OF BULK SIC SUBSTRATES BY FEMTOSECOND LASER ABLATION

Popis výsledku anglicky

SiC is a material basis for pressure and strain sensors used in harsh thermal environment conditions. For such sensor devices, piezoelectric III-N compounds, especially gallium nitride (GaN)-related heterostructures on appropriate tailored SiC diaphragms are often used. We demonstrated that diaphragms can be fabricated faster with laser ablation than by reactive ion etching. However, laser ablation frequently causes pinholes in SiC membranes provoking increased risk to damage the III-N heterostructure by the fabrication process. Our experiments confirmed that pinhole defects in the ablated membranes are initiated by ripple structures related to the polarization of the laser. We developed an ablation technique inhibiting the formation of pin holes caused by laser induced periodic surface structures (LIPSS). In addition we tested the hypothesis that LIPSS in SiC act like slot waveguides performing a numerical study of light propagation in LIPSS. The results showed that laser intensity is enhanced inside LIPSS which supports the experimental ablation findings in the formation of pinholes and led us to effective countermeasures.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 22 th International conference on APPLIED PHYSICS OF CONDENSED MATTER

ISBN

978-80-227-4373-0

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

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Název nakladatele

FEI, Slovak University of Technology

Místo vydání

Bratislava

Místo konání akce

Strbske Pleso

Datum konání akce

22. 6. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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