Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00305303" target="_blank" >RIV/68407700:21230/16:00305303 - isvavai.cz</a>

Výsledek na webu

<a href="http://link.springer.com/journal/542" target="_blank" >http://link.springer.com/journal/542</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00542-016-2887-2" target="_blank" >10.1007/s00542-016-2887-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Popis výsledku v původním jazyce

AlGaN/GaN-based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. The sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modiied by membrane thickness. In case of SiC as substrate material of the epitaxial AlGaN/GaN heterostructure layers, we applied laser ablation technique for micromachining of the membranes. We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520 nm) ablation. On a 350 µm-thick 4H-SiC substrate we produced an array of 275 µm deep and 1000–3000 µm in diameter blind holes without damaging the 2 µm GaN layer at the back side. Our experiments indicate that pinhole defects in the ablated membranes are affected by ripple structures related to the polarization of the laser. We developed an ablation technique inhibiting the formation of pin holes caused by laser induced periodic surface structures (LIPSS).

Název v anglickém jazyce

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Popis výsledku anglicky

AlGaN/GaN-based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. The sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modiied by membrane thickness. In case of SiC as substrate material of the epitaxial AlGaN/GaN heterostructure layers, we applied laser ablation technique for micromachining of the membranes. We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520 nm) ablation. On a 350 µm-thick 4H-SiC substrate we produced an array of 275 µm deep and 1000–3000 µm in diameter blind holes without damaging the 2 µm GaN layer at the back side. Our experiments indicate that pinhole defects in the ablated membranes are affected by ripple structures related to the polarization of the laser. We developed an ablation technique inhibiting the formation of pin holes caused by laser induced periodic surface structures (LIPSS).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Microsystem Technologies

ISSN

0946-7076

e-ISSN

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Svazek periodika

22

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

1883-1892

Kód UT WoS článku

000379331500038

EID výsledku v databázi Scopus

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