Influence of Non-adherent Yeast Cells on Electrical Characteristics of Diamond-based Field-effect Transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00233157" target="_blank" >RIV/68407700:21230/15:00233157 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.nanocon.eu/en/" target="_blank" >http://www.nanocon.eu/en/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Non-adherent Yeast Cells on Electrical Characteristics of Diamond-based Field-effect Transistors

Popis výsledku v původním jazyce

Diamond thin films were used as the substrate for cell cul-ture and as the bio-electronic sensor. Here we studied the in-fluence of yeast cells (Saccharomyces cerevisiae) on the electrical characteristics of nanocrystalline diamond-based solution-gated field effect transistor (SGFET). The working principle of diamond-based SGFETs lies on the H-terminated active surface with subsurface p-type channel. In present study two different cell culture solutions (sucrose and yeast peptone dextrose (YPD)) were used, with and without yeast cells. The transfer characteristics of SGFETs shown a negative shift of the gate voltage to higher values for both cell solutions, i.e. sucrose and YPD with cells, by -26 mV and -42 mV, respectively, in comparison to blank so-lutions without cells. This effect was attributed to change in pH in close vicinity at the H-terminated diamond surface due to metabolic processes of yeast cells. The pH sensitivi-ties of the diamond-based SGFETs and the role of negative surface charge of yeast cells on the SGFETs electrical char-acteristics are discussed.

Název v anglickém jazyce

Influence of Non-adherent Yeast Cells on Electrical Characteristics of Diamond-based Field-effect Transistors

Popis výsledku anglicky

Diamond thin films were used as the substrate for cell cul-ture and as the bio-electronic sensor. Here we studied the in-fluence of yeast cells (Saccharomyces cerevisiae) on the electrical characteristics of nanocrystalline diamond-based solution-gated field effect transistor (SGFET). The working principle of diamond-based SGFETs lies on the H-terminated active surface with subsurface p-type channel. In present study two different cell culture solutions (sucrose and yeast peptone dextrose (YPD)) were used, with and without yeast cells. The transfer characteristics of SGFETs shown a negative shift of the gate voltage to higher values for both cell solutions, i.e. sucrose and YPD with cells, by -26 mV and -42 mV, respectively, in comparison to blank so-lutions without cells. This effect was attributed to change in pH in close vicinity at the H-terminated diamond surface due to metabolic processes of yeast cells. The pH sensitivi-ties of the diamond-based SGFETs and the role of negative surface charge of yeast cells on the SGFETs electrical char-acteristics are discussed.

Druh

O - Ostatní výsledky

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů