Influence of buffers and culture media on diamond solution-gated field effect transistors regarding stability and memory effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00480307" target="_blank" >RIV/68378271:_____/17:00480307 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/17:00315832

Výsledek na webu

<a href="http://dx.doi.org/10.3390/proceedings1040525" target="_blank" >http://dx.doi.org/10.3390/proceedings1040525</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/proceedings1040525" target="_blank" >10.3390/proceedings1040525</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of buffers and culture media on diamond solution-gated field effect transistors regarding stability and memory effect

Popis výsledku v původním jazyce

The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the same pH of 7.4 caused different voltage shifts in transfer characteristics. This effect was reversible which indicates the surface stability of the hydrogen-terminated diamond during repeated measurements. In contrast to this observation, the SGFET sensitivity decreased after applying the culture solutions which we attribute to the permanently adsorbed bio-layer formed on the SGFET channel sensing area.n

Název v anglickém jazyce

Influence of buffers and culture media on diamond solution-gated field effect transistors regarding stability and memory effect

Popis výsledku anglicky

The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the same pH of 7.4 caused different voltage shifts in transfer characteristics. This effect was reversible which indicates the surface stability of the hydrogen-terminated diamond during repeated measurements. In contrast to this observation, the SGFET sensitivity decreased after applying the culture solutions which we attribute to the permanently adsorbed bio-layer formed on the SGFET channel sensing area.n

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings (Basel, Switzerland)

ISBN

—

ISSN

2504-3900

e-ISSN

—

Počet stran výsledku

4

Strana od-do

—

Název nakladatele

MDPI

Místo vydání

Basel

Místo konání akce

Paris

Datum konání akce

3. 9. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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