Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00303272" target="_blank" >RIV/68407700:21230/16:00303272 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface

Popis výsledku v původním jazyce

Because of the unique electronic properties, the freestanding graphene nanoribbons are intensively investigated in the last few years. The potential application extends to gas sensors, field effect transistors, spintronics, plasmonics and more. Until recently, there was no possibility to inexpensively produce such structures. By exploiting of the different crystallographic planes of SiC a promising method which may be used to produce freestanding graphene was enabled. In this study we present calculation of molecular mechanics and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We analyzed the effects of hydrogenization of the SiC surface and conducted a series of calculations adressing the shape of the resulting freestanding graphene layer. Finally, we calculated transmission spectrum and I/V curve of the structure.

Název v anglickém jazyce

Simulation of Epitaxially Grown Graphene on Step-Shaped SiC Surface

Popis výsledku anglicky

Because of the unique electronic properties, the freestanding graphene nanoribbons are intensively investigated in the last few years. The potential application extends to gas sensors, field effect transistors, spintronics, plasmonics and more. Until recently, there was no possibility to inexpensively produce such structures. By exploiting of the different crystallographic planes of SiC a promising method which may be used to produce freestanding graphene was enabled. In this study we present calculation of molecular mechanics and electronic transport properties of epitaxially grown graphene on step-shaped SiC substrate. We analyzed the effects of hydrogenization of the SiC surface and conducted a series of calculations adressing the shape of the resulting freestanding graphene layer. Finally, we calculated transmission spectrum and I/V curve of the structure.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů