Trench MOS Having Source with Waffle Patterns

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00321792" target="_blank" >RIV/68407700:21230/18:00321792 - isvavai.cz</a>

Výsledek na webu

<a href="http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf" target="_blank" >http://radio.feld.cvut.cz/conf/poster/proceedings/Poster_2018/Section_EI/EI_051_Vacula.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Trench MOS Having Source with Waffle Patterns

Popis výsledku v původním jazyce

In power MOSFETs devices can be recognized trends to replace planar gate by trench gate structures. The power devices with planar gates are simplier to fabricate and have higher maturity than non-planar power MOSFETs. In contrast Trench MOSFETs have a better performance but are more complex to fabricate and due to this have lower maturity. Proposed paper describe two new trench MOSFET structures with different gate patterns with optimized drain to source to On resistance. In general, for power MOSFET’s structures comparison the specific On resistance on area is used. This paper uses a normalized gate perimeter of element pattern, as an alternative figure of merit for a different trench MOSFET structure comparison because it is proportional to channel width and to drain to source resistance. Advantages and drawbacks of proposed new power MOSFETs structures are described.

Název v anglickém jazyce

Trench MOS Having Source with Waffle Patterns

Popis výsledku anglicky

In power MOSFETs devices can be recognized trends to replace planar gate by trench gate structures. The power devices with planar gates are simplier to fabricate and have higher maturity than non-planar power MOSFETs. In contrast Trench MOSFETs have a better performance but are more complex to fabricate and due to this have lower maturity. Proposed paper describe two new trench MOSFET structures with different gate patterns with optimized drain to source to On resistance. In general, for power MOSFET’s structures comparison the specific On resistance on area is used. This paper uses a normalized gate perimeter of element pattern, as an alternative figure of merit for a different trench MOSFET structure comparison because it is proportional to channel width and to drain to source resistance. Advantages and drawbacks of proposed new power MOSFETs structures are described.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the International Student Scientific Conference Poster – 22/2018

ISBN

978-80-01-06428-3

ISSN

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e-ISSN

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Počet stran výsledku

67

Strana od-do

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Název nakladatele

Czech Technical University in Prague

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

10. 5. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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