Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00342240" target="_blank" >RIV/68407700:21230/20:00342240 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.23919/AE49394.2020.9232796" target="_blank" >http://dx.doi.org/10.23919/AE49394.2020.9232796</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.23919/AE49394.2020.9232796" target="_blank" >10.23919/AE49394.2020.9232796</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET

Popis výsledku v původním jazyce

This paper introduces the latest modern automatized advanced measurement flow of the diamond layout shape MOS transistors (DLS MOSFETs) as well as the rectangular layout shape (RLS) MOSFETs directly on a wafer. There are presented photos of the DLS MOSFET, from the highest level of the wafer down to the lowest level of the wafer, where each photo is individually commented. The next part of this article presents each item of the proposed measurement flow, such as an air compressor, temperature forcing system, probe cards, and precision semiconductor parameter analyzer. Also, there is shown, a photo of the probe card used for the measurement, as well as planning of its needles. Besides others, there is describe four-points measurement strategy, and the last part of this paper recommends the minimum number of measurements in order to obtain relevant data. Finally, the measured data is compared with a theoretic analytical expression

Název v anglickém jazyce

Comparison of Measured Data Given by Automatized Measurement Methodology with the Analytical Expression of DLS MOSFET

Popis výsledku anglicky

This paper introduces the latest modern automatized advanced measurement flow of the diamond layout shape MOS transistors (DLS MOSFETs) as well as the rectangular layout shape (RLS) MOSFETs directly on a wafer. There are presented photos of the DLS MOSFET, from the highest level of the wafer down to the lowest level of the wafer, where each photo is individually commented. The next part of this article presents each item of the proposed measurement flow, such as an air compressor, temperature forcing system, probe cards, and precision semiconductor parameter analyzer. Also, there is shown, a photo of the probe card used for the measurement, as well as planning of its needles. Besides others, there is describe four-points measurement strategy, and the last part of this paper recommends the minimum number of measurements in order to obtain relevant data. Finally, the measured data is compared with a theoretic analytical expression

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2020 International Conference on Applied Electronics

ISBN

978-80-261-0891-7

ISSN

1803-7232

e-ISSN

—

Počet stran výsledku

6

Strana od-do

3-8

Název nakladatele

Západočeská univerzita v Plzni

Místo vydání

Plzeň

Místo konání akce

Plzeň

Datum konání akce

8. 9. 2020

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—