Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00373279" target="_blank" >RIV/68407700:21230/22:00373279 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1109/AE54730.2022.9920095" target="_blank" >https://doi.org/10.1109/AE54730.2022.9920095</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/AE54730.2022.9920095" target="_blank" >10.1109/AE54730.2022.9920095</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data

Popis výsledku v původním jazyce

This paper presents an interesting phenomenon related to the effective threshold voltage changes (δVth,eff) in the diamond layout shape MOS transistors (DLS MOSFETs). Besides it, its analytical expression is presented here for the first time. The analytical approximative expression has been defined based on the results of the 3-D TCAD simulations for the different effective aspect ratio (W/L)eff and different angle α of DLS MOSFET. The effective aspect ratio has been set to 2.0, 1.5, 1.0, 0.5 with the angle α varied from 180° to 80° with the step 20°. Furthermore, for purpose to verify the 3-D TCAD simulation results and measurement results, 1 124 samples were fabricated, which were proportionally divided into rectangle layout shape (RLS) MOSFETs and DLS MOSFETs with the angles α equal to 120°, 100°, and 80°. All the samples have been fabricated in the 160 nm BCD technology process. The mentioned phenomenon described by the proposed expression fits the measured data with a very high level of accuracy equal to 99.995 %. Thus, the presented analytical expression proves its quality. Thanks to the high level of the expression quality, the given expression is recommended to use for the analog designs with high-level precision requests and DLS MOSFET components.

Název v anglickém jazyce

Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data

Popis výsledku anglicky

This paper presents an interesting phenomenon related to the effective threshold voltage changes (δVth,eff) in the diamond layout shape MOS transistors (DLS MOSFETs). Besides it, its analytical expression is presented here for the first time. The analytical approximative expression has been defined based on the results of the 3-D TCAD simulations for the different effective aspect ratio (W/L)eff and different angle α of DLS MOSFET. The effective aspect ratio has been set to 2.0, 1.5, 1.0, 0.5 with the angle α varied from 180° to 80° with the step 20°. Furthermore, for purpose to verify the 3-D TCAD simulation results and measurement results, 1 124 samples were fabricated, which were proportionally divided into rectangle layout shape (RLS) MOSFETs and DLS MOSFETs with the angles α equal to 120°, 100°, and 80°. All the samples have been fabricated in the 160 nm BCD technology process. The mentioned phenomenon described by the proposed expression fits the measured data with a very high level of accuracy equal to 99.995 %. Thus, the presented analytical expression proves its quality. Thanks to the high level of the expression quality, the given expression is recommended to use for the analog designs with high-level precision requests and DLS MOSFET components.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2022 International Conference on Applied Electronics (AE)

ISBN

978-1-6654-9481-6

ISSN

1803-7232

e-ISSN

—

Počet stran výsledku

6

Strana od-do

—

Název nakladatele

IEEE Xplore

Místo vydání

—

Místo konání akce

Plzeň

Datum konání akce

6. 9. 2022

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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