Study of Cracks Formation in Highly – Low Boron-Doped Epitaxial (113) Diamond Bilayers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00356607" target="_blank" >RIV/68407700:21230/21:00356607 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21460/21:00356607

Výsledek na webu

<a href="https://doi.org/10.37904/nanocon.2021.4326" target="_blank" >https://doi.org/10.37904/nanocon.2021.4326</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/nanocon.2021.4326" target="_blank" >10.37904/nanocon.2021.4326</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of Cracks Formation in Highly – Low Boron-Doped Epitaxial (113) Diamond Bilayers

Popis výsledku v původním jazyce

In this work, we present the study of the formation of cracks in high and low boron-doped diamond epitaxial bilayers necessary in the fabrication process of Schottky diodes. Epitaxial diamond layers were grown on (113) oriented diamond substrates by Microwave Plasma Enhanced Chemical Vapor Deposition. The effect of the thickness and the methane concentration during the growth of the undoped diamond layer on the crack formation have been studied using optical and scanning electron microscopy (SEM). We experimentally observed a critical thickness of ca. 3.5 µm above which all undoped layers are cracked. The formation of these cracks is attributed to the relaxation of the elastic energy stored in the epitaxial undoped layer due to the significant lattice mismatch (ca. 0.8 %) between the undoped and highly boron-doped diamond layers with a boron concentration of 1021 cm-3 as determined by Raman spectroscopy analysis.

Název v anglickém jazyce

Study of Cracks Formation in Highly – Low Boron-Doped Epitaxial (113) Diamond Bilayers

Popis výsledku anglicky

In this work, we present the study of the formation of cracks in high and low boron-doped diamond epitaxial bilayers necessary in the fabrication process of Schottky diodes. Epitaxial diamond layers were grown on (113) oriented diamond substrates by Microwave Plasma Enhanced Chemical Vapor Deposition. The effect of the thickness and the methane concentration during the growth of the undoped diamond layer on the crack formation have been studied using optical and scanning electron microscopy (SEM). We experimentally observed a critical thickness of ca. 3.5 µm above which all undoped layers are cracked. The formation of these cracks is attributed to the relaxation of the elastic energy stored in the epitaxial undoped layer due to the significant lattice mismatch (ca. 0.8 %) between the undoped and highly boron-doped diamond layers with a boron concentration of 1021 cm-3 as determined by Raman spectroscopy analysis.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Nanocon 2021 - ABSTRACTS

ISBN

978-80-88365-00-6

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

65-68

Název nakladatele

TANGER

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

20. 10. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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