Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00358621" target="_blank" >RIV/68407700:21230/22:00358621 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1109/LED.2022.3187159" target="_blank" >https://doi.org/10.1109/LED.2022.3187159</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/LED.2022.3187159" target="_blank" >10.1109/LED.2022.3187159</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors

Popis výsledku v původním jazyce

Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/μs for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).

Název v anglickém jazyce

Fast Recovery Diodes for High-Current High-Voltage Insulated Gate Bipolar Transistors

Popis výsledku anglicky

Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/μs for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Electron Device Letters

ISSN

0741-3106

e-ISSN

1558-0563

Svazek periodika

43

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

1311-1314

Kód UT WoS článku

000831160000043

EID výsledku v databázi Scopus

2-s2.0-85133774525