Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00368205" target="_blank" >RIV/68407700:21230/24:00368205 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/24:00599689

Výsledek na webu

<a href="https://doi.org/10.59957/jctm.v59.i2.2024.15" target="_blank" >https://doi.org/10.59957/jctm.v59.i2.2024.15</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.59957/jctm.v59.i2.2024.15" target="_blank" >10.59957/jctm.v59.i2.2024.15</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Popis výsledku v původním jazyce

Numerous parameters are regulated in the wet chemical oxidation process for TOPCon/POLO solar cell technology to improve silicon oxide passivation (SiO2). Understanding the electronic properties, particularly the lifetime of the carriers and their thickness, requires knowledge of the properties of the surface of crystalline silicon (c-Si), which is subjected to native oxide etching followed by wet chemical oxidation, such as nitric acid or hot water oxidation and various hydrogenation methods. This is tracked with lifetime measurement equipment, and spectral ellipsometry is used to measure the thickness of the oxide layer by using the single sided polished wafers with surface orientation (1 1 1). In addition to the actual values, their time stability is also tracked. Before the hydrogenation step was introduced, the lifetime of the samples was in the order of approximately 0.001 ms, which is less than the bulk lifetime. With the hydrogenation , lifetime increased by more than order of magnitude for relatively long time with no difference between (1 1 1) and (1 0 0) wafers indicating that hydrogenation of the Si/SiO2 interface is performed.

Název v anglickém jazyce

Optimizing stability of wet chemistry oxide passivation of Si (111) and Si (100)

Popis výsledku anglicky

Numerous parameters are regulated in the wet chemical oxidation process for TOPCon/POLO solar cell technology to improve silicon oxide passivation (SiO2). Understanding the electronic properties, particularly the lifetime of the carriers and their thickness, requires knowledge of the properties of the surface of crystalline silicon (c-Si), which is subjected to native oxide etching followed by wet chemical oxidation, such as nitric acid or hot water oxidation and various hydrogenation methods. This is tracked with lifetime measurement equipment, and spectral ellipsometry is used to measure the thickness of the oxide layer by using the single sided polished wafers with surface orientation (1 1 1). In addition to the actual values, their time stability is also tracked. Before the hydrogenation step was introduced, the lifetime of the samples was in the order of approximately 0.001 ms, which is less than the bulk lifetime. With the hydrogenation , lifetime increased by more than order of magnitude for relatively long time with no difference between (1 1 1) and (1 0 0) wafers indicating that hydrogenation of the Si/SiO2 interface is performed.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Chemical Technology and Metallurgy

ISSN

1314-7471

e-ISSN

1314-7978

Svazek periodika

59

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

BG - Bulharská republika

Počet stran výsledku

6

Strana od-do

361-366

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85186560120